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光電感測器 Ge Photodiodes

Germanium Photodiodes-01
Germanium Photodiodes-02

Germanium Photodiodes

DETAIL

Germanium photodiodes are widely used for measuring optical power in the near-infrared (NIR) range, particularly in cost-sensitive systems or applications requiring large-area detectors. Compared with similarly sized InGaAs detectors, however, germanium devices typically exhibit lower shunt resistance and higher dark current, which leads to increased noise.

As a result, germanium photodiodes are best suited for applications in which the detected signal is significantly higher than the noise floor. To improve performance, GPD Optoelectronics offers its “HS” series of germanium photodiodes, designed with higher-than-typical shunt resistance.


 

  • Features

  • Chip diameters from 1 mm to 25 mm
  • Spectral response from 800 nm to 1700 nm
  • High linearity > 10 dBm
  • Multiple window and lens options
  • Optical filters available (neutral density, bandpass, etc.)
  • Thermoelectric cooling options
  • Wide packaging variety: TO packages, BNC options, chip on ceramic submount, and more

 

  • Applications

  • Optical power meters
  • LED/LD characterization and burn-in diagnostics
  • Spectroscopy
  • Eye-safe laser detection sensors

 

  • Operating Voltage

​​​​​​We offer several germanium chip designs based on the preferred operating voltage.
  • GM series: Designed for high-speed applications with reverse bias > 10 V
  • HS series: Designed for applications with reverse bias < 5 V
  • VHS series: Designed for zero-bias applications
  • VHR series: Designed for zero-bias applications requiring high shunt resistance


  • Packaging Capablilities

Packaging Configurations
Size TO Headers Ceramic Leadless Chip
Carriers
TO-46 TO-18 TO-5 TO-8 TO-9 LCC-6 LCC-28 BNC
1 mm dia. ● ● ●
2 mm dia. ● ●
3 mm dia. ● ● ●
5 mm dia. ● ● ●
10x10 mm ● ●
Window (Other Options Available)
Material Molded Clear Glass Sapphire Borosilicate Glass
Thickness (mm) 0.25 0.5 0.5


 

  • Specifications

1 mm Diameter Germanium Photodiode Performance Specifications
Part Number GB100-XX GH100-XX GV100-XX
Optoelectronic Characteristics @ 23 ºC ± 2 ºC Units
RSHUNT @ 10mV (min/typ) 20/40 60/100 200/280 kΩ
IDARK (max) 4 1.5 0.5 μA
Capacitance (max) 95 300 1500 pF
VREVERSE 15 2 0.3 V
NEP (typ) 1.5 1 0.6 pW/Hz1/2
Maximum Reverse Voltage 15 3 0.3 V

 
2 mm Diameter Germanium Photodiode Performance Specifications
Part Number GB200-XX GH200-XX GV200-XX
Optoelectronic Characteristics @ 23 ºC ± 2 ºC Units
RSHUNT @ 10mV (min/typ) 6/12 30/60 80/120 kΩ
IDARK (max) 10 3 1 μA
Capacitance (max) 360 2200 7000 pF
VREVERSE 10 2 0.3 V
NEP (typ) 3 1.4 0.8 pW/Hz1/2
Maximum Reverse Voltage 15 3 0.5 V

 
3 mm Diameter Germanium Photodiode Performance Specifications
Part Number GB300-XX GH300-XX GV300-XX
Optoelectronic Characteristics @ 23 ºC ± 2 ºC Units
RSHUNT @ 10mV (min/typ) 4/8 25/35 40/65 kΩ
IDARK (max) 20 4 2 μA
Capacitance (max) 1200 7000 14000 pF
VREVERSE 5 1 0.25 V
NEP (typ) 4 2 1 pW/Hz1/2
Maximum Reverse Voltage 10 3 0.5 V

 
5 mm Diameter Germanium Photodiode Performance Specifications
Part Number GB500-XX GH500-XX GV500-XX
Optoelectronic Characteristics @ 23 ºC ± 2 ºC Units
RSHUNT @ 10mV (min/typ) 2/4 10/15 15/20 kΩ
IDARK (max) 30 10 5 μA
Capacitance (max) 3000 17000 40000 pF
VREVERSE 3 1 0.1 V
NEP (typ) 5 3 2 pW/Hz1/2
Maximum Reverse Voltage 10 3 0.3 V


10 x 10 mm Diameter Germanium Photodiode Performance Specifications
Part Number GB10M-XX GH10M-XX GV10M-XX
Optoelectronic Characteristics @ 23 ºC ± 2 ºC Units
RSHUNT @ 10mV (min/typ) Contact us
for more
information		 2/3.5 Contact us
for more
information		 kΩ
IDARK (max) 50 μA
Capacitance (max) 90000 pF
VREVERSE 0.5 V
NEP (typ) 6 pW/Hz1/2
Maximum Reverse Voltage 1 V
 

  • Standard Products

Opto/Electronic Characteristics @ 23 ºC ± 2 ºC
 Units
Active Diameter 1 1 1 2 2 2 3 3 3 5 5 5 10×10 mm
Part Number GB100-T18
GB100-LCC6		 GH100-T18
GH100-LCC6		 GV100-T18
GV100-LCC6		 GB200-T5
GB200-LCC6		 GH200-T5
GH200-LCC6		 GV200-T5
GV200-LCC6		 GB300-T5
GB300-LCC28		 GH300-T5
GH300-LCC28		 GV300-T5
GV300-LCC28		 GB500-T8
GB500-LCC28		 GH500-T8
GH500-LCC28		 GV500-T8
GV500-LCC28		 GH10M-T9
GH10M-LCC28
Legacy Part Number GM5 GM5HS GM5VHS GM6 GM6HS GM6VHS GM7 GM7HS GM7VHS GM8 GM8HS GM8VHS GM10HS
Spectral Response 800-1800 nm
Rλ(typ)@ 850 nm 0.26 A/W
Rλ(typ) @ 1300 nm 0.70 A/W
Rλ(typ)@ 1550 nm 0.85 A/W
RSHUNT (min/typ) 20/40 60/100 200/280 6/12 30/60 80/120 4/8 25/35 40/65 2/4 10/15 15/20 2/3.5 kΩ
IDARK (max) 3 1.5 0.5 10 3 1 30 4 3 40 15 5 50 μA
CDIODE (max) 85 300 1,450 300 1,200 9,000 800 4,000 13,000 3,000 6,000 35,000 30,000 pF
VREVERSE 10 2 0.3 10 2 0.3 5 1 0.25 3 1 0.1 0.5 V
NEP 1.5 1 0.6 3 1.4 0.8 4 2 1 5 3 2 6 pW/Hz1/2
Linearity 8 8 8 8 8 8 8 8 8 8 8 8 8 dB
TO Packages TO-18 TO-18 TO-18 TO-5 TO-5 TO-5 TO-5 TO-5 TO-5 TO-8 TO-8 TO-8 TO-9
Leadless Chip Carrier LCC-6 LCC-6 LCC-6 LCC-6 LCC-6 LCC-6 LCC-28 LCC-28 LCC-28 LCC-28 LCC-28 LCC-28 Hybrid  
Storage Temperature -40 to 125 ºC
Operating Temperature -40 to 85 ºC
Max Reverse Voltage 15 3 0.3 15 3 0.5 10 3 0.5 5 3 0.3 1 V
Max Reverse Current -10 mA
Max Forward Current 10 mA



Figure1-Responsivity vs. Wavelength




Figure 2-Capacitance vs. Reverse Bias
 

 
Figure 3-Dark Current vs. Reverse Bias



Figure 4-Shunt Resistance vs. Temperature



Figure 5. Photocurrent vs. Input Power
 
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