The LP-PD-D10 is a large-area InGaAs/InP PIN photodiode chip featuring a 10 mm active area diameter and a spectral response range of 900–1650 nm. The InGaAs PIN structure is based on an InP substrate and fabricated using MOCVD and planar diffusion technologies.
Designed for near-infrared detection, the LP-PD-D10 provides high responsivity with a typical value of 0.90 A/W at 1310 nm and 0.95 A/W at 1550 nm. It also features low dark current, low capacitance, and high shunt resistance.
In addition to the standard 10 mm active area, other sensitive-area sizes, shapes, and package styles can be provided according to application requirements.
Designed for near-infrared detection, the LP-PD-D10 provides high responsivity with a typical value of 0.90 A/W at 1310 nm and 0.95 A/W at 1550 nm. It also features low dark current, low capacitance, and high shunt resistance.
In addition to the standard 10 mm active area, other sensitive-area sizes, shapes, and package styles can be provided according to application requirements.
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Features
- 10 mm active diameter
- Spectral response range of 900–1650 nm
- High responsivity
- Low dark current
- Low capacitance
- High shunt resistance
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Applications
- Monitoring
- Fiber-optic instruments
- Data communications
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Specifications
(Tc=25℃)
|
Parameter
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
Test conditions
|
|
Response range
|
λ
|
900
|
—
|
1650
|
nm
|
—
|
|
Responsivity
|
R
|
0.85
|
0.90
|
—
|
A/W
|
λ = 1310 nm
|
|
Responsivity
|
R
|
—
|
0.95
|
—
|
A/W
|
λ = 1550 nm
|
|
Responsivity
|
R
|
—
|
0.2
|
—
|
A/W
|
λ = 850 nm
|
|
Dark current
|
ID
|
—
|
15
|
100
|
nA
|
VR = -2 V
|
|
Capacitance
|
C
|
—
|
12
|
—
|
nF
|
VR = 0 V, f = 1 MHz
|
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Absolute maximum ratings
| Parameter | Symbol | Value | Unit |
| Reverse voltage | VRmax | 5 | V |
| Forward current | — | 10 | mA |
| Operating temperature | Topr | -40 to +85 | °C |
| Storage temperature | Tstg | -55 to +125 | °C |
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Dimension Parameters
| Parameter | Symbol | Value | Unit |
| Active area diameter | D | 10 | mm |
| Bond pad diameter | — | 200 | µm |
| Die size | — | 10,300 × 10,300 | µm |
| Die thickness | t | 200 ± 20 | µm |
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Dimension