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光電感測器 InGaAs Photodiodes

InGaAs Photodiodes-01

InGaAs Photodiodes

DETAIL

  • Features

  • Chip active diameters from 100 μm to 10000 μm
  • Spectral response from 850 nm to 1700 nm, available with photodiodes up to 2.6 nm
  • High shunt resistance for high sensitivity
  • Multiple lens and window options
  • Thermoelectric cooling options

 

  • Applications

  • NIR Sensing/Radiometry
  • LED/LD Characterization
  • Spectroscopy
  • Medical Diagnostics
  • Telcom/Datacom Power Monitor

 

  • Product Family

Opto/Electronic Characteristics @ 23 ºC ± 2 ºC

 Units
Active Diameter 100µm 300µm 500µm 1mm 2mm 3mm 3mm (Low Cap.) 5mm
Part Number N17S10-T46
N17S10-T18
N17S10-LCC4		 N17S30-T46
N17S30-T18
N17S30-LCC4		 N17S50-T46
N17S50-T18
N17S50-LCC4		 N17S100-T46
N17S100-T18
N17S100-LCC4		 N17S200-T5
N17S200-LCC6		 N17S300-T5
N17S300-LCC28		 N17L300-T5
N17L300-LCC28		 N17S500-T8
N17S500-LCC28
Legacy Part Number GAP100 GAP300 GAP500 GAP1000 GAP2000 GAP3000 GAP3000HS GAP5000
Spectral Response Range 800-1700 800-1700 800-1700 800-1700 800-1700 800-1700 800-1700 800-1700 nm
Peak Wavelength (typ) 1550 1550 1550 1550 1550 1550 1550 1550 nm
Responsivity @ 850 nm (min/typ) 0.2 / 0.27 0.2 / 0.27 0.2 / 0.27 0.2 / 0.27 0.2 / 0.27 0.2 / 0.27 0.2 / 0.27 0.2 / 0.27 A/W
Responsivity @ 1300 nm (min/typ) 0.85 / 1.0 0.85 / 1.0 0.85 / 1.0 0.85 / 1.0 0.85 / 1.0 0.85 / 1.0 0.85 / 1.0 0.85 / 1.0 A/W
Responsivity @ 1550 nm (min/typ) 0.93 / 1.1 0.93 / 1.1 0.93 / 1.1 0.93 / 1.1 0.93 / 1.1 0.93 / 1.1 0.93 / 1.1 0.93 / 1.1 A/W
Shunt Resistance (min/typ) 1000 200 100 10 / 90 typ 5 / 30 typ 5 / 15 typ 5 / 15 typ 2 / 10 typ MΩ
Dark Current @ VR (typ/max) 0.05 / 1 @ 5 V 0.5 / 5 @ 5 V 0.8 / 5 @ 5 V 1 / 8 @ 5 V 3 / 10 @ 2 V 5 / 15 @ 1 V 3 / 15 @ 5 V 10 / 200 @ 0.5 V nA
Capacitance @ 0 V (typ/max) 1 / 1.2 @ 5 V 6 / 8 @ 5 V 12 / 18 @ 5 V 150 / 250 500 / 800 1200 / 1600 500 / 660 2700 / 4000 pF
Capacitance @ VR (typ/max) Not Measured 25 40 50 / 110 @ 5 V 200 / 300 @ 3 V 500 / 700 @ 2 V 200 / 400 @ 5 V Not Available pF
NEP @ λPEAK @ 0 V (typ) 4 12 16 12 typ 25 typ 30 typ 40 typ 40 typ fW/Hz1/2
Linearity (± 0.2 dB) @ 0 V (min) 8 8 8 6 6 min 6 min 6 min 6 min dB
TO Packages TO-46/TO-18 TO-46/TO-18 TO-46/TO-18 TO-46/TO-18 TO-5 TO-5 TO-5 TO-8
Leadless Ceramic Packages LCC-4 LCC-4 LCC-4 LCC-4 / LCC-6 LCC-6 LCC-28 LCC-28 LCC-28
Storage Temperature -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 -40 to 125 ºC
Operating Temperature -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 -40 to 85 ºC
Max Reverse Voltage 25 25 20 20 5 5 5 3 V
Max Reverse Current 10 10 10 10 10 10 10 10 mA
Max Forward Current 10 10 10 10 10 10 10 10 mA


Figure1-InGaAs Response vs. Wavelength vs. Temperature
 



Figure 2-InGaAs Response vs. Wavelength vs. Temperature (Cont.)
 
 
 
Figure 3-Dark Current vs. Reverse Voltage vs. Diameter




Figure 4-Capacitance (pF) vs. Reverse Voltage (V) vs. Diameter (mm)

 
 
 

  • Small Area InGaAs Photodiodes -
    1.7µm cutoff wavelength 100μm-1mm dia. active areas

Packaging Capabilities 
Packaging Configurations
Diameter (μm) TO Headers Ceramic Leadless
Chip Carrier
TO-46 TO-18 LCC-6
100 ● ●
150 ● ●
300 ● ●
500 ● ● ●
1000 ● ● ●
Window (Other Options Available)
Material Molded Clear Glass Borosilicate Glass
Thickness (mm) 0.25 0.5
 
Package Outlines
 
TO-46
TO-18
LCC-6


 

  • Large Area InGaAs Photodiodes -
    1.7µm cutoff wavelength 1-5 mm dia. active areas

Packaging Capabilities 
Packaging Configurations
Diameter (mm) TO Headers Ceramic Leadless
Chip Carrier
TO-46 TO-18 TO-5 TO-8 LCC-6 LCC-28 BNC
1 ● ● ● ●
1.5 ● ● ● ●
2 ● ●
3 ● ● ●
5 ● ● ● ●
Window (Other Options Available)
Material Molded Clear Glass Borosilicate Glass
Thickness (mm) 0.25 0.5

Package Outlines
 
TO-46
TO-18

 
TO-5


TO-8

LCC-6
 
LCC-28


BNC



 
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