產品資訊

光電感測器 高速 InGaAs Photodiodes

High Speed InGaAs Photodiodes

DETAIL

Indium gallium arsenide photodiodes are commonly used to detect wavelengths in the NIR range. The benefits of using InGaAs are that it has much higher shunt resistance and lower dark current than germanium, making it ideal for sensitive measurements and other low-noise applications.

Features
Chip diameters from 60 μm to 300 μm
Spectral response from 850 nm to 1700 nm
Low dark current for high sensitivity
Low capacitance for high speed (up to 2.5 GHz depending on package)
Wide packaging variety: TO packages, fiber pigtails, chip on ceramic submount, and more

Applications
Optical communication
Time-resolved fluorescence measurements
LED/LD temporal characterization
LiDAR
Free Space Optics (FSO)

Electrical Characteristics @ 25 °C

	GAP60/CS	GAP75	GAP100	GAP300
Active Diameter	60	75	100	300	µm
Responsivity @ 850nm	0.10 (0.20)	0.10 (0.20)	0.10 (0.20)	0.10 (0.20)	A/W min. (typ.)
1300nm	0.80 (0.90)	0.80 (0.90)	0.80 (0.90)	0.80 (0.90)	A/W min. (typ.)
1550nm	0.95	0.95	0.95	0.95	A/W min.
Dark Current @ 5V	0.8 (0.3)	0.8 (0.3)	1.0 (0.5)	5.0 (1.0)	nA max. (typ.)
Capacitance @ 5V	0.7(0.5)/0.5(0.3)-CS	0.8 (0.6)	1.2 (1.0)	8.0 (4.0)	pF max. (typ.)
Bandwidth 50Ω -3dB	6/10-CS	10	3	0.8	GHz min. @ 5V
Rise/Fall time RL = 50Ω	0.06/0.03-CS	0.07	0.1	0.4	ns max. @ 5V
NEP @ 1550 nm	10.0E-15	10E-15	13E-15	18E-15	W/√Hz typ.
Case Style (standard)	TO-46(mod)/CS-1	TO-46(mod)	TO-46(mod)	TO-46(mod)

Maximum Ratings

	GAP60/CS	GAP75	GAP100	GAP300
Storage Temperature	-40 to 125	-40 to 125	-40 to 125	-40 to 125	°C
Operating Temperature	-40 to 85	-40 to 85	-40 to 85	-40 to 85	°C
Reverse Voltage	25	25	25	25	V
Reverse Current	1	10	10	25	mA
Forward Current	10	10	10	100	mA